AOW15S60 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 15.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 831 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 51+ | 1.42 EUR |
| 57+ | 1.27 EUR |
| 59+ | 1.22 EUR |
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Technische Details AOW15S60 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 600V 15A TO262, Packaging: Tube, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V.
Weitere Produktangebote AOW15S60 nach Preis ab 1.22 EUR bis 1.42 EUR
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AOW15S60 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Case: TO262 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 15.6nC Kind of channel: enhanced |
auf Bestellung 831 Stücke: Lieferzeit 14-21 Tag (e) |
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AOW15S60 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-262 |
Produkt ist nicht verfügbar |
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AOW15S60 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 15A TO262 Packaging: Tube Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V |
Produkt ist nicht verfügbar |