AOW66613 Alpha & Omega Semiconductor


aow66613.pdf Hersteller: Alpha & Omega Semiconductor
60V N-Channel MOSFET
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details AOW66613 Alpha & Omega Semiconductor

Description: N, Packaging: Tape & Reel (TR), Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 120A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 260W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V.

Weitere Produktangebote AOW66613

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
AOW66613 Hersteller : Alpha & Omega Semiconductor aow66613.pdf 60V N-Channel MOSFET
Produkt ist nicht verfügbar
AOW66613 Hersteller : Alpha & Omega Semiconductor Inc. AOW66613.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 260W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Produkt ist nicht verfügbar