APL602J MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: Transistor modules MOSFET
Description: Module; single transistor; 600V; 43A; ISOTOP; screw; Idm: 172A; 565W
Technology: Linear™
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Semiconductor structure: single transistor
On-state resistance: 0.125Ω
Type of semiconductor module: MOSFET transistor
Drain current: 43A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Pulsed drain current: 172A
Power dissipation: 565W
Anzahl je Verpackung: 1 Stücke
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Technische Details APL602J MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 600V 43A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 21.5A, 12V, Power Dissipation (Max): 565W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: ISOTOP®, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V.
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APL602J | Hersteller : Microchip Technology |
Description: MOSFET N-CH 600V 43A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 21.5A, 12V Power Dissipation (Max): 565W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
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| APL602J | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 43A; ISOTOP; screw; Idm: 172A; 565W Technology: Linear™ Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Kind of package: tube Polarisation: unipolar Kind of channel: enhancement Semiconductor structure: single transistor On-state resistance: 0.125Ω Type of semiconductor module: MOSFET transistor Drain current: 43A Gate-source voltage: ±30V Drain-source voltage: 600V Pulsed drain current: 172A Power dissipation: 565W |
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