APT10021JLL

APT10021JLL Microchip Technology


10021jll.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 1KV 37A 4-Pin SOT-227 Tube
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Technische Details APT10021JLL Microchip Technology

Description: MOSFET N-CH 1000V 37A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: ISOTOP®, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V.

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APT10021JLL Hersteller : MICROCHIP (MICROSEMI) 5610-apt10021jll-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 694W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
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APT10021JLL Hersteller : MICROSEMI 5610-apt10021jll-datasheet ISOTOP/POWER MOSFET - MOS7 APT10021
Anzahl je Verpackung: 10 Stücke
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APT10021JLL APT10021JLL Hersteller : Microchip Technology 5610-apt10021jll-datasheet Description: MOSFET N-CH 1000V 37A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V
Produkt ist nicht verfügbar
APT10021JLL Hersteller : Microchip Technology APT10021JLL_C-1593129.pdf Discrete Semiconductor Modules MOSFET MOS7 1000 V 21 Ohm SOT-227
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APT10021JLL Hersteller : MICROCHIP (MICROSEMI) 5610-apt10021jll-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 694W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar