Technische Details APT10035JFLL Microsemi
Category: Transistor modules MOSFET, Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W, Mechanical mounting: screw, Electrical mounting: screw, Semiconductor structure: single transistor, Drain-source voltage: 1kV, Drain current: 25A, On-state resistance: 370mΩ, Power dissipation: 520W, Polarisation: unipolar, Kind of package: tube, Technology: POWER MOS 7®, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 100A, Type of semiconductor module: MOSFET transistor, Case: ISOTOP, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT10035JFLL
Foto | Bezeichnung | Hersteller | Beschreibung |
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APT10035JFLL | Hersteller : Microchip Technology |
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APT10035JFLL | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 25A On-state resistance: 370mΩ Power dissipation: 520W Polarisation: unipolar Kind of package: tube Technology: POWER MOS 7® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 100A Type of semiconductor module: MOSFET transistor Case: ISOTOP Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10035JFLL | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 14A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT10035JFLL | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 25A On-state resistance: 370mΩ Power dissipation: 520W Polarisation: unipolar Kind of package: tube Technology: POWER MOS 7® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 100A Type of semiconductor module: MOSFET transistor Case: ISOTOP |
Produkt ist nicht verfügbar |