APT10035LFLLG Microchip / Microsemi
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Technische Details APT10035LFLLG Microchip / Microsemi
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264, Kind of channel: enhancement, Case: TO264, Type of transistor: N-MOSFET, Mounting: THT, Technology: POWER MOS 7®, Gate charge: 186nC, On-state resistance: 370mΩ, Drain current: 28A, Gate-source voltage: ±30V, Pulsed drain current: 112A, Power dissipation: 690W, Drain-source voltage: 1kV, Polarisation: unipolar, Kind of package: tube, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT10035LFLLG
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APT10035LFLLG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 1KV 28A 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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APT10035LFLLG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 1KV 28A 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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APT10035LFLLG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264 Kind of channel: enhancement Case: TO264 Type of transistor: N-MOSFET Mounting: THT Technology: POWER MOS 7® Gate charge: 186nC On-state resistance: 370mΩ Drain current: 28A Gate-source voltage: ±30V Pulsed drain current: 112A Power dissipation: 690W Drain-source voltage: 1kV Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10035LFLLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 28A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT10035LFLLG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264 Kind of channel: enhancement Case: TO264 Type of transistor: N-MOSFET Mounting: THT Technology: POWER MOS 7® Gate charge: 186nC On-state resistance: 370mΩ Drain current: 28A Gate-source voltage: ±30V Pulsed drain current: 112A Power dissipation: 690W Drain-source voltage: 1kV Polarisation: unipolar Kind of package: tube |
Produkt ist nicht verfügbar |