APT10045JLL Microchip Technology
| Anzahl | Preis |
|---|---|
| 1+ | 69.75 EUR |
| 10+ | 67.04 EUR |
| 25+ | 66.12 EUR |
| 100+ | 63.2 EUR |
| 250+ | 58.89 EUR |
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Technische Details APT10045JLL Microchip Technology
Description: MOSFET N-CH 1000V 21A ISOTOP, Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOTOP®, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Power Dissipation (Max): 460W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote APT10045JLL nach Preis ab 74.82 EUR bis 74.82 EUR
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APT10045JLL | Microchip Technology |
 Description: MOSFET N-CH 1000V 21A ISOTOPInput Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOTOP® Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10045JLL | Microchip / Microsemi |
Discrete Semiconductor Modules FG, MOSFET,1000V, 0.45_OHM, SOT-227 |
auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| APT10045JLL |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 21A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: MOSFET N-CH 1000V 21A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 74.82 EUR |
| APT10045JLL |
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Hersteller: Microchip / Microsemi
Discrete Semiconductor Modules FG, MOSFET,1000V, 0.45_OHM, SOT-227
Discrete Semiconductor Modules FG, MOSFET,1000V, 0.45_OHM, SOT-227
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)