APT10050LVFRG Microchip Technology
| Anzahl | Preis |
|---|---|
| 1+ | 36.85 EUR |
| 10+ | 36.17 EUR |
| 25+ | 35.13 EUR |
| 100+ | 32.47 EUR |
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Technische Details APT10050LVFRG Microchip Technology
Description: MOSFET N-CH 1000V 21A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: TO-264 [L], Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V.
Weitere Produktangebote APT10050LVFRG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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APT10050LVFRG | Microchip Technology |
 Description: MOSFET N-CH 1000V 21A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT10050LVFRG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 21A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Description: MOSFET N-CH 1000V 21A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH