APT10078BFLLG MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Kind of package: tube
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 95nC
Technology: POWER MOS 7®
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 56A
Mounting: THT
Case: TO247-3
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 780mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APT10078BFLLG MICROCHIP TECHNOLOGY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3, Kind of package: tube, Power dissipation: 403W, Polarisation: unipolar, Gate charge: 95nC, Technology: POWER MOS 7®, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 56A, Mounting: THT, Case: TO247-3, Drain-source voltage: 1kV, Drain current: 14A, On-state resistance: 780mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT10078BFLLG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
APT10078BFLLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 780mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
APT10078BFLLG | Hersteller : Microchip Technology |
MOSFET FG, FREDFET, 1000V, TO-247, RoHS |
Produkt ist nicht verfügbar |
|
|
|
APT10078BFLLG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Kind of package: tube Power dissipation: 403W Polarisation: unipolar Gate charge: 95nC Technology: POWER MOS 7® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 56A Mounting: THT Case: TO247-3 Drain-source voltage: 1kV Drain current: 14A On-state resistance: 780mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |