APT10078BFLLG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-3
On-state resistance: 780mΩ
Technology: POWER MOS 7®
Power dissipation: 403W
Polarisation: unipolar
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 56A
Drain-source voltage: 1kV
Drain current: 14A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APT10078BFLLG MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 1000V 14A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 780mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 25 V.
Weitere Produktangebote APT10078BFLLG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
APT10078BFLLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 780mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
APT10078BFLLG | Hersteller : Microchip Technology |
MOSFET FG, FREDFET, 1000V, TO-247, RoHS |
Produkt ist nicht verfügbar |
|
|
|
APT10078BFLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Type of transistor: N-MOSFET Mounting: THT Case: TO247-3 On-state resistance: 780mΩ Technology: POWER MOS 7® Power dissipation: 403W Polarisation: unipolar Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 56A Drain-source voltage: 1kV Drain current: 14A |
Produkt ist nicht verfügbar |