
APT100GN120J Microchip Technology

IGBT Modules IGBT Fieldstop Low Frequency Single 1200 V 100 A SOT-227
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 62.71 EUR |
100+ | 54.14 EUR |
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Technische Details APT100GN120J Microchip Technology
Description: IGBT MOD 1200V 153A 446W ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 153 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 446 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V.
Weitere Produktangebote APT100GN120J
Foto | Bezeichnung | Hersteller | Beschreibung |
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APT100GN120J | Hersteller : Microchip / Microsemi |
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auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100GN120J | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Mechanical mounting: screw Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 300A Application: for inductive load; for UPS; motors; SMPS Kind of package: tube Electrical mounting: screw Technology: Field Stop; Trench Type of semiconductor module: IGBT Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT100GN120J | Hersteller : MICROSEMI |
![]() Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT100GN120J | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 153 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 446 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V |
Produkt ist nicht verfügbar |
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APT100GN120J | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Mechanical mounting: screw Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 300A Application: for inductive load; for UPS; motors; SMPS Kind of package: tube Electrical mounting: screw Technology: Field Stop; Trench Type of semiconductor module: IGBT Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |