APT100GN60LDQ4G Microchip Technology
auf Bestellung 518 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 22.37 EUR |
| 25+ | 21.45 EUR |
| 100+ | 19.11 EUR |
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Technische Details APT100GN60LDQ4G Microchip Technology
Description: IGBT TRENCH FS 600V 229A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A, Supplier Device Package: TO-264 [L], IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/310ns, Switching Energy: 4.75mJ (on), 2.675mJ (off), Test Condition: 400V, 100A, 1Ohm, 15V, Gate Charge: 600 nC, Current - Collector (Ic) (Max): 229 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 625 W.
Weitere Produktangebote APT100GN60LDQ4G nach Preis ab 22.72 EUR bis 22.72 EUR
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APT100GN60LDQ4G | Hersteller : Microchip Technology |
 Description: IGBT TRENCH FS 600V 229A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A Supplier Device Package: TO-264 [L] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/310ns Switching Energy: 4.75mJ (on), 2.675mJ (off) Test Condition: 400V, 100A, 1Ohm, 15V Gate Charge: 600 nC Current - Collector (Ic) (Max): 229 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 625 W |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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APT100GN60LDQ4G | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 600V 229A 625000mW 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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| APT100GN60LDQ4G | Hersteller : MICROSEMI |
TO264/INSULATED GATE BIPOLAR TRANSISTOR - FIELDSTOP LOW FREQ - COMBI APT100GN60 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT100GN60LDQ4G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 135A; 625W; TO264 Collector current: 135A Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 300A Turn-off time: 435ns Mounting: THT Kind of package: tube Turn-on time: 96ns Type of transistor: IGBT Gate charge: 600nC Collector-emitter voltage: 600V Power dissipation: 625W |
Produkt ist nicht verfügbar |