APT10M07JVFR Microchip Technology
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 111.32 EUR |
| 250+ | 96.17 EUR |
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Technische Details APT10M07JVFR Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A, Technology: POWER MOS 5®, Case: ISOTOP, Mechanical mounting: screw, Electrical mounting: screw, Kind of package: tube, Polarisation: unipolar, Kind of channel: enhancement, Semiconductor structure: single transistor, On-state resistance: 7mΩ, Type of semiconductor module: MOSFET transistor, Drain current: 225A, Gate-source voltage: ±30V, Drain-source voltage: 100V, Pulsed drain current: 900A, Power dissipation: 700W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT10M07JVFR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APT10M07JVFR | Hersteller : Microsemi | Discrete Semiconductor Modules Power FREDFET - MOS5 |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10M07JVFR | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 100V 225A 4-Pin SOT-227 Tube |
Produkt ist nicht verfügbar |
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| APT10M07JVFR | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A Technology: POWER MOS 5® Case: ISOTOP Mechanical mounting: screw Electrical mounting: screw Kind of package: tube Polarisation: unipolar Kind of channel: enhancement Semiconductor structure: single transistor On-state resistance: 7mΩ Type of semiconductor module: MOSFET transistor Drain current: 225A Gate-source voltage: ±30V Drain-source voltage: 100V Pulsed drain current: 900A Power dissipation: 700W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT10M07JVFR | Hersteller : MICROSEMI |
ISOTOP/POWER FREDFET - MOS5 APT10M07 Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| APT10M07JVFR | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A Technology: POWER MOS 5® Case: ISOTOP Mechanical mounting: screw Electrical mounting: screw Kind of package: tube Polarisation: unipolar Kind of channel: enhancement Semiconductor structure: single transistor On-state resistance: 7mΩ Type of semiconductor module: MOSFET transistor Drain current: 225A Gate-source voltage: ±30V Drain-source voltage: 100V Pulsed drain current: 900A Power dissipation: 700W |
Produkt ist nicht verfügbar |