APT10M07JVFR Microchip Technology
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 111.32 EUR |
| 250+ | 96.17 EUR |
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Technische Details APT10M07JVFR Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A, Drain-source voltage: 100V, Drain current: 225A, On-state resistance: 7mΩ, Power dissipation: 700W, Polarisation: unipolar, Case: ISOTOP, Kind of package: tube, Electrical mounting: screw, Mechanical mounting: screw, Technology: POWER MOS 5®, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 900A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: single transistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT10M07JVFR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APT10M07JVFR | Hersteller : Microsemi | Discrete Semiconductor Modules Power FREDFET - MOS5 |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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APT10M07JVFR | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 100V 225A 4-Pin SOT-227 Tube |
Produkt ist nicht verfügbar |
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| APT10M07JVFR | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A Drain-source voltage: 100V Drain current: 225A On-state resistance: 7mΩ Power dissipation: 700W Polarisation: unipolar Case: ISOTOP Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 5® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 900A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT10M07JVFR | Hersteller : MICROSEMI |
ISOTOP/POWER FREDFET - MOS5 APT10M07 Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| APT10M07JVFR | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 225A; ISOTOP; screw; Idm: 900A Drain-source voltage: 100V Drain current: 225A On-state resistance: 7mΩ Power dissipation: 700W Polarisation: unipolar Case: ISOTOP Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 5® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 900A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |