APT10M09LVFRG Microchip Technology
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Technische Details APT10M09LVFRG Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A, Type of transistor: N-MOSFET, Technology: POWER MOS 5®, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 100A, Pulsed drain current: 400A, Power dissipation: 625W, Case: TO264, Gate-source voltage: ±30V, On-state resistance: 9mΩ, Mounting: THT, Gate charge: 0.35µC, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT10M09LVFRG
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APT10M09LVFRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 9mΩ Mounting: THT Gate charge: 0.35µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT10M09LVFRG | Hersteller : Microchip Technology | Discrete Semiconductor Modules FREDFET MOS5 100 V 9 mOhm TO-264 |
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APT10M09LVFRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 9mΩ Mounting: THT Gate charge: 0.35µC Kind of channel: enhanced |
Produkt ist nicht verfügbar |