Technische Details APT12057B2FLLG Microsemi Power Products Group
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX, Mounting: THT, Pulsed drain current: 88A, Power dissipation: 690W, Gate charge: 185nC, Polarisation: unipolar, Technology: POWER MOS 7®, Drain current: 22A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, Kind of package: tube, Case: TO247MAX, On-state resistance: 570mΩ.
Weitere Produktangebote APT12057B2FLLG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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APT12057B2FLLG | Microchip Technology |
 MOSFETs FREDFET MOS 7 1200 V 570 mOhm TO-247 MAX |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT12057B2FLLG | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX Mounting: THT Pulsed drain current: 88A Power dissipation: 690W Gate charge: 185nC Polarisation: unipolar Technology: POWER MOS 7® Drain current: 22A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO247MAX On-state resistance: 570mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT12057B2FLLG |
|
Hersteller: Microchip Technology
MOSFETs FREDFET MOS 7 1200 V 570 mOhm TO-247 MAX
MOSFETs FREDFET MOS 7 1200 V 570 mOhm TO-247 MAX
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT12057B2FLLG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Pulsed drain current: 88A
Power dissipation: 690W
Gate charge: 185nC
Polarisation: unipolar
Technology: POWER MOS 7®
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247MAX
On-state resistance: 570mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 88A; 690W; TO247MAX
Mounting: THT
Pulsed drain current: 88A
Power dissipation: 690W
Gate charge: 185nC
Polarisation: unipolar
Technology: POWER MOS 7®
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247MAX
On-state resistance: 570mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH