Technische Details APT13GP120BG Microchip Technology
Description: IGBT PT 1200V 41A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 9ns/28ns, Switching Energy: 115µJ (on), 165µJ (off), Test Condition: 600V, 13A, 5Ohm, 15V, Gate Charge: 55 nC, Current - Collector (Ic) (Max): 41 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 50 A, Power - Max: 250 W.
Weitere Produktangebote APT13GP120BG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| APT13GP120BG | Microchip / Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single |
auf Bestellung 81 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| APT13GP120BG |
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Hersteller: Microchip / Microsemi
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)

