APT14M100B MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 500W
Technology: POWER MOS 8®
Pulsed drain current: 55A
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
On-state resistance: 880mΩ
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
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Technische Details APT14M100B MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 1000V 14A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V.
Weitere Produktangebote APT14M100B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| APT14M100B | Hersteller : MICROSEMI |
TO-247/14 A, 1000 V, 0.88 ohm, N-CHANNEL, Si, POWER, MOSFET APT14M100 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT14M100B | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT14M100B | Hersteller : Microchip Technology |
MOSFET FG, MOSFET, 1000V, TO-247 |
Produkt ist nicht verfügbar |
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APT14M100B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 9A; Idm: 55A; 500W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 500W Technology: POWER MOS 8® Pulsed drain current: 55A Gate charge: 0.12µC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET On-state resistance: 880mΩ Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |