APT14M120S MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK
Mounting: SMD
Case: D3PAK
Power dissipation: 625W
Gate charge: 145nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 1.1Ω
Gate-source voltage: ±30V
Pulsed drain current: 51A
Anzahl je Verpackung: 1 Stücke
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Technische Details APT14M120S MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 1200V 14A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 7A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V.
Weitere Produktangebote APT14M120S
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APT14M120S | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1200V 14A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 7A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT14M120S | Hersteller : Microchip Technology |
 MOSFET FG, MOSFET, 1200V, TO-268 |
Produkt ist nicht verfügbar |
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APT14M120S | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 625W Gate charge: 145nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.1Ω Gate-source voltage: ±30V Pulsed drain current: 51A |
Produkt ist nicht verfügbar |