APT14M120S Microchip Technology

Description: MOSFET N-CH 1200V 14A D3PAK, Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D3Pak, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 625W (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.