
APT15GN120SDQ1G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK
Kind of package: tube
Gate charge: 90nC
Turn-on time: 19ns
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Pulsed collector current: 45A
Power dissipation: 195W
Collector-emitter voltage: 1.2kV
Technology: Field Stop
Case: D3PAK
Mounting: SMD
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK
Kind of package: tube
Gate charge: 90nC
Turn-on time: 19ns
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Pulsed collector current: 45A
Power dissipation: 195W
Collector-emitter voltage: 1.2kV
Technology: Field Stop
Case: D3PAK
Mounting: SMD
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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Technische Details APT15GN120SDQ1G MICROCHIP TECHNOLOGY
Category: SMD IGBT transistors, Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK, Kind of package: tube, Gate charge: 90nC, Turn-on time: 19ns, Turn-off time: 355ns, Gate-emitter voltage: ±30V, Collector current: 22A, Pulsed collector current: 45A, Power dissipation: 195W, Collector-emitter voltage: 1.2kV, Technology: Field Stop, Case: D3PAK, Mounting: SMD, Type of transistor: IGBT, Features of semiconductor devices: integrated anti-parallel diode, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT15GN120SDQ1G
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APT15GN120SDQ1G | Hersteller : Microchip Technology |
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APT15GN120SDQ1G | Hersteller : Microchip Technology |
Description: IGBT 1200V 45A 195W TO247 Packaging: Tube Part Status: Active |
Produkt ist nicht verfügbar |
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APT15GN120SDQ1G | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APT15GN120SDQ1G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK Kind of package: tube Gate charge: 90nC Turn-on time: 19ns Turn-off time: 355ns Gate-emitter voltage: ±30V Collector current: 22A Pulsed collector current: 45A Power dissipation: 195W Collector-emitter voltage: 1.2kV Technology: Field Stop Case: D3PAK Mounting: SMD Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |