APT15GN120SDQ1G Microchip Technology
Hersteller: Microchip Technology
Description: IGBT 1200V 45A 195W TO247
Packaging: Tube
Part Status: Active
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Technische Details APT15GN120SDQ1G Microchip Technology
Category: SMD IGBT transistors, Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK, Technology: Field Stop, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 45A, Type of transistor: IGBT, Turn-on time: 19ns, Kind of package: tube, Case: D3PAK, Turn-off time: 355ns, Gate-emitter voltage: ±30V, Collector current: 22A, Mounting: SMD, Collector-emitter voltage: 1.2kV, Power dissipation: 195W, Gate charge: 90nC.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| APT15GN120SDQ1G | Microchip Technology |
IGBTs IGBT Fieldstop Low Frequency Combi 1200 V 15 A TO-268 |
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Im Einkaufswagen Stück im Wert von UAH | |
 |
APT15GN120SDQ1G | MICROCHIP TECHNOLOGY |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 19ns Kind of package: tube Case: D3PAK Turn-off time: 355ns Gate-emitter voltage: ±30V Collector current: 22A Mounting: SMD Collector-emitter voltage: 1.2kV Power dissipation: 195W Gate charge: 90nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT15GN120SDQ1G |
|
Hersteller: Microchip Technology
IGBTs IGBT Fieldstop Low Frequency Combi 1200 V 15 A TO-268
IGBTs IGBT Fieldstop Low Frequency Combi 1200 V 15 A TO-268
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT15GN120SDQ1G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: D3PAK
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: SMD
Collector-emitter voltage: 1.2kV
Power dissipation: 195W
Gate charge: 90nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: D3PAK
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: SMD
Collector-emitter voltage: 1.2kV
Power dissipation: 195W
Gate charge: 90nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH