Technische Details APT17F100S Microsemi
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK, Type of transistor: N-MOSFET, Mounting: SMD, Case: D3PAK, On-state resistance: 780mΩ, Technology: POWER MOS 8®, Power dissipation: 625W, Polarisation: unipolar, Gate charge: 150nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 70A, Drain-source voltage: 1kV, Drain current: 11A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT17F100S
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT17F100S | Hersteller : MICROCHIP (MICROSEMI) |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK Type of transistor: N-MOSFET Mounting: SMD Case: D3PAK On-state resistance: 780mΩ Technology: POWER MOS 8® Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 70A Drain-source voltage: 1kV Drain current: 11A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT17F100S | Hersteller : MICROSEMI |
D3-PAK/17 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER,MOSFET APT17 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT17F100S | Hersteller : Microsemi Power Products Group |
Description: MOSFET N-CH 1000V 17A D3PAK |
Produkt ist nicht verfügbar |
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APT17F100S | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 11A; Idm: 70A; 625W; D3PAK Type of transistor: N-MOSFET Mounting: SMD Case: D3PAK On-state resistance: 780mΩ Technology: POWER MOS 8® Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 70A Drain-source voltage: 1kV Drain current: 11A |
Produkt ist nicht verfügbar |