APT17F120J Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 18A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 14A, 10V
Power Dissipation (Max): 545W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 56.94 EUR |
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Technische Details APT17F120J Microchip Technology
Description: MOSFET N-CH 1200V 18A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 580mOhm @ 14A, 10V, Power Dissipation (Max): 545W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: ISOTOP®, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| APT17F120J | Microsemi |
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auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT17F120J |
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Hersteller: Microsemi
Discrete Semiconductor Modules Power FREDFET - MOS8
Discrete Semiconductor Modules Power FREDFET - MOS8
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)