APT200GT60JR Microchip Technology
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Technische Details APT200GT60JR Microchip Technology
Description: IGBT MOD 600V 195A 500W SOT227, Packaging: Tray, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: SOT-227, IGBT Type: NPT, Current - Collector (Ic) (Max): 195 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 500 W, Current - Collector Cutoff (Max): 25 µA, Input Capacitance (Cies) @ Vce: 8.65 nF @ 25 V.
Weitere Produktangebote APT200GT60JR
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| APT200GT60JR | Hersteller : MICROCHIP TECHNOLOGY |
 Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 600V; Ic: 100A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 100A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 600A Mechanical mounting: screw Kind of package: tube Technology: NPT; Thunderblot IGBT® Anzahl je Verpackung: 1 Stücke |
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APT200GT60JR | Hersteller : Microchip Technology |
Description: IGBT MOD 600V 195A 500W SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: NPT Current - Collector (Ic) (Max): 195 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 500 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 8.65 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APT200GT60JR | Hersteller : Microchip Technology |
IGBT Modules IGBT NPT Medium Frequency Single 600 V 200 A SOT-227 |
Produkt ist nicht verfügbar |
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| APT200GT60JR | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 100A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 100A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 600A Mechanical mounting: screw Kind of package: tube Technology: NPT; Thunderblot IGBT® |
Produkt ist nicht verfügbar |