APT20GN60BDQ2G Microchip Technology
Hersteller: Microchip TechnologyIGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 20 A TO-247
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 11.46 EUR |
| 100+ | 9.89 EUR |
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Technische Details APT20GN60BDQ2G Microchip Technology
Description: IGBT FIELDSTOP COMBI 600V 20A TO, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 30 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 9ns/140ns, Switching Energy: 230µJ (on), 580µJ (off), Test Condition: 400V, 20A, 4.3Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 136 W.
Weitere Produktangebote APT20GN60BDQ2G nach Preis ab 12.32 EUR bis 12.32 EUR
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APT20GN60BDQ2G | Hersteller : Microchip Technology |
Description: IGBT FIELDSTOP COMBI 600V 20A TO Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 9ns/140ns Switching Energy: 230µJ (on), 580µJ (off) Test Condition: 400V, 20A, 4.3Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 136 W |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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APT20GN60BDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT20GN60BDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |