Technische Details APT20M18LVRG Microsemi
Description: MOSFET N-CH 200V 100A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: TO-264 [L], Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V.
Weitere Produktangebote APT20M18LVRG
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APT20M18LVRG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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APT20M18LVRG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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| APT20M18LVRG | Hersteller : MICROCHIP TECHNOLOGY |
APT20M18LVRG THT N channel transistors |
Produkt ist nicht verfügbar |
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APT20M18LVRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 200V 100A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V |
Produkt ist nicht verfügbar |