Technische Details APT20M18LVRG Microsemi
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A, Type of transistor: N-MOSFET, Technology: POWER MOS 5®, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 100A, Pulsed drain current: 400A, Power dissipation: 625W, Case: TO264, Gate-source voltage: ±30V, On-state resistance: 18mΩ, Mounting: THT, Gate charge: 330nC, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT20M18LVRG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
APT20M18LVRG | Hersteller : Microchip Technology | Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
||
APT20M18LVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
APT20M18LVRG | Hersteller : Microchip Technology | Description: MOSFET N-CH 200V 100A TO264 |
Produkt ist nicht verfügbar |
||
APT20M18LVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |