Technische Details APT20M20B2FLLG Microchip Technology
Description: MOSFET N-CH 200V 100A T-MAX, Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Supplier Device Package: T-MAX™ [B2], Vgs(th) (Max) @ Id: 5V @ 2.5mA, Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.
Weitere Produktangebote APT20M20B2FLLG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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APT20M20B2FLLG | Microchip Technology |
 Description: MOSFET N-CH 200V 100A T-MAXInput Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Supplier Device Package: T-MAX™ [B2] Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT20M20B2FLLG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 100A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: MOSFET N-CH 200V 100A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH