APT22F80B Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 800V 23A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4595 pF @ 25 V
auf Bestellung 262 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 15.77 EUR |
| 100+ | 12.8 EUR |
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Technische Details APT22F80B Microchip Technology
Description: MOSFET N-CH 800V 23A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4595 pF @ 25 V.
Weitere Produktangebote APT22F80B nach Preis ab 13.32 EUR bis 15.79 EUR
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APT22F80B | Hersteller : Microchip Technology |
MOSFETs FREDFET MOS8 800 V 22 A TO-247 |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT22F80B | Hersteller : MICROCHIP TECHNOLOGY |
APT22F80B THT N channel transistors |
Produkt ist nicht verfügbar |