Technische Details APT25GN120B2DQ2G MICROSEMI
Description: IGBT 1200V 67A 272W TMAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, IGBT Type: NPT, Trench Field Stop, Td (on/off) @ 25°C: 22ns/280ns, Switching Energy: 2.15µJ (off), Test Condition: 800V, 25A, 4.3Ohm, 15V, Gate Charge: 155 nC, Current - Collector (Ic) (Max): 67 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 272 W.
Weitere Produktangebote APT25GN120B2DQ2G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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APT25GN120B2DQ2G | Microchip Technology |
 Description: IGBT 1200V 67A 272W TMAXPackaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: 22ns/280ns Switching Energy: 2.15µJ (off) Test Condition: 800V, 25A, 4.3Ohm, 15V Gate Charge: 155 nC Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 272 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 60 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT25GN120B2DQ2G | Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, T-MAX, RoHS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT25GN120B2DQ2G |
|
Hersteller: Microchip Technology
Description: IGBT 1200V 67A 272W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Switching Energy: 2.15µJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
Description: IGBT 1200V 67A 272W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Switching Energy: 2.15µJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 60 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT25GN120B2DQ2G |
|
Hersteller: Microchip Technology
IGBT Transistors FG, IGBT, 1200V, T-MAX, RoHS
IGBT Transistors FG, IGBT, 1200V, T-MAX, RoHS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH