Technische Details APT25GN120B2DQ2G MICROSEMI
Description: IGBT 1200V 67A 272W TMAX, Power - Max: 272 W, Current - Collector Pulsed (Icm): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 67 A, Gate Charge: 155 nC, Test Condition: 800V, 25A, 4.3Ohm, 15V, Switching Energy: 2.15µJ (off), Td (on/off) @ 25°C: 22ns/280ns, IGBT Type: NPT, Trench Field Stop, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.
Weitere Produktangebote APT25GN120B2DQ2G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
APT25GN120B2DQ2G | Microchip Technology |
 Description: IGBT 1200V 67A 272W TMAXPower - Max: 272 W Current - Collector Pulsed (Icm): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 67 A Gate Charge: 155 nC Test Condition: 800V, 25A, 4.3Ohm, 15V Switching Energy: 2.15µJ (off) Td (on/off) @ 25°C: 22ns/280ns IGBT Type: NPT, Trench Field Stop Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 60 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT25GN120B2DQ2G | Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, T-MAX, RoHS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT25GN120B2DQ2G |
|
Hersteller: Microchip Technology
Description: IGBT 1200V 67A 272W TMAX
Power - Max: 272 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 67 A
Gate Charge: 155 nC
Test Condition: 800V, 25A, 4.3Ohm, 15V
Switching Energy: 2.15µJ (off)
Td (on/off) @ 25°C: 22ns/280ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: IGBT 1200V 67A 272W TMAX
Power - Max: 272 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 67 A
Gate Charge: 155 nC
Test Condition: 800V, 25A, 4.3Ohm, 15V
Switching Energy: 2.15µJ (off)
Td (on/off) @ 25°C: 22ns/280ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 60 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT25GN120B2DQ2G |
|
Hersteller: Microchip Technology
IGBT Transistors FG, IGBT, 1200V, T-MAX, RoHS
IGBT Transistors FG, IGBT, 1200V, T-MAX, RoHS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH