Technische Details APT25GP120BDQ1G MICROSEMI
Description: IGBT 1200V 69A 417W TO247, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 417 W, Current - Collector Pulsed (Icm): 90 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 69 A, Gate Charge: 110 nC, Test Condition: 600V, 25A, 5Ohm, 15V, Switching Energy: 500µJ (on), 440µJ (off), Td (on/off) @ 25°C: 12ns/70ns, IGBT Type: PT, Supplier Device Package: TO-247 [B], Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote APT25GP120BDQ1G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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APT25GP120BDQ1G | Microchip Technology |
 Description: IGBT 1200V 69A 417W TO247Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 417 W Current - Collector Pulsed (Icm): 90 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 69 A Gate Charge: 110 nC Test Condition: 600V, 25A, 5Ohm, 15V Switching Energy: 500µJ (on), 440µJ (off) Td (on/off) @ 25°C: 12ns/70ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
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 |
APT25GP120BDQ1G | Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT25GP120BDQ1G |
|
Hersteller: Microchip Technology
Description: IGBT 1200V 69A 417W TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 417 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 69 A
Gate Charge: 110 nC
Test Condition: 600V, 25A, 5Ohm, 15V
Switching Energy: 500µJ (on), 440µJ (off)
Td (on/off) @ 25°C: 12ns/70ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Description: IGBT 1200V 69A 417W TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 417 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 69 A
Gate Charge: 110 nC
Test Condition: 600V, 25A, 5Ohm, 15V
Switching Energy: 500µJ (on), 440µJ (off)
Td (on/off) @ 25°C: 12ns/70ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT25GP120BDQ1G |
|
Hersteller: Microchip Technology
IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS
IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH