APT25GR120S Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT NPT 1200V 75A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 742µJ (on), 427µJ (off)
Test Condition: 600V, 25A, 4.3Ohm, 15V
Gate Charge: 203 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 521 W
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.04 EUR |
| 100+ | 8.97 EUR |
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Technische Details APT25GR120S Microchip Technology
Description: IGBT NPT 1200V 75A D3PAK, Packaging: Bulk, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A, Supplier Device Package: D3Pak, IGBT Type: NPT, Td (on/off) @ 25°C: 16ns/122ns, Switching Energy: 742µJ (on), 427µJ (off), Test Condition: 600V, 25A, 4.3Ohm, 15V, Gate Charge: 203 nC, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 521 W.
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APT25GR120S | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 100A Turn-on time: 26ns Turn-off time: 164ns Type of transistor: IGBT Power dissipation: 521W Kind of package: tube Gate charge: 154nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Mounting: SMD Case: D3PAK |
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