APT25GR120SD15 Microchip Technology
Hersteller: Microchip Technology
Description: IGBT 1200V 75A 521W D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 742µJ (on), 427µJ (off)
Test Condition: 600V, 25A, 4.3Ohm, 15V
Gate Charge: 203 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 521 W
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Technische Details APT25GR120SD15 Microchip Technology
Description: IGBT 1200V 75A 521W D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A, Supplier Device Package: D3Pak, IGBT Type: NPT, Td (on/off) @ 25°C: 16ns/122ns, Switching Energy: 742µJ (on), 427µJ (off), Test Condition: 600V, 25A, 4.3Ohm, 15V, Gate Charge: 203 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 521 W.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
APT25GR120SD15 | Microchip Technology |
IGBT Transistors IGBT MOS 8 1200 V 25 A TO-268 |
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| APT25GR120SD15 |
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Hersteller: Microchip Technology
IGBT Transistors IGBT MOS 8 1200 V 25 A TO-268
IGBT Transistors IGBT MOS 8 1200 V 25 A TO-268
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


