APT25GR120SSCD10 Microsemi
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Technische Details APT25GR120SSCD10 Microsemi
Description: IGBT 1200V 75A 521W D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A, Supplier Device Package: D3Pak, IGBT Type: NPT, Td (on/off) @ 25°C: 16ns/122ns, Switching Energy: 434µJ (on), 466µJ (off), Test Condition: 600V, 25A, 4.3Ohm, 15V, Gate Charge: 203 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 521 W.
Weitere Produktangebote APT25GR120SSCD10
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT25GR120SSCD10 | Hersteller : Microchip Technology |
 Trans IGBT Chip N-CH 1200V 75A 521000mW 3-Pin(2+Tab) D3PAK Tube |
Produkt ist nicht verfügbar |
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APT25GR120SSCD10 | Hersteller : Microsemi Corporation |
Description: IGBT 1200V 75A 521W D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Supplier Device Package: D3Pak IGBT Type: NPT Td (on/off) @ 25°C: 16ns/122ns Switching Energy: 434µJ (on), 466µJ (off) Test Condition: 600V, 25A, 4.3Ohm, 15V Gate Charge: 203 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 521 W |
Produkt ist nicht verfügbar |