APT26M100JCU2 MICROSEMI
Hersteller: MICROSEMI
ISOTOP-4/26 A, 1000 V, 0.396 ohm, N-CHANNEL, Si, POWER,MOSFET APT26M100J
Anzahl je Verpackung: 1 Stücke
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Technische Details APT26M100JCU2 MICROSEMI
Description: MOSFET N-CH 1000V 26A SOT227, Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-227, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Power Dissipation (Max): 543W (Tc), Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Bulk.
Weitere Produktangebote APT26M100JCU2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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APT26M100JCU2 | Microchip Technology |
Description: MOSFET N-CH 1000V 26A SOT227 Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-227 Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 26 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
APT26M100JCU2 | Microchip Technology |
Discrete Semiconductor Modules CC0014 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 26 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT26M100JCU2 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 26A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Description: MOSFET N-CH 1000V 26A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT26M100JCU2 |
|
Hersteller: Microchip Technology
Discrete Semiconductor Modules CC0014
Discrete Semiconductor Modules CC0014
Produkt ist nicht verfügbar
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen
Stück im Wert von UAH