Technische Details APT28M120B2 Microchip Technology
Description: MOSFET N-CH 1200V 29A T-MAX, Supplier Device Package: T-MAX™ [B2], Vgs(th) (Max) @ Id: 5V @ 2.5mA, Power Dissipation (Max): 1135W (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V.
Weitere Produktangebote APT28M120B2 nach Preis ab 38.95 EUR bis 38.95 EUR
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APT28M120B2 | Hersteller : Microchip Technology |
 Description: MOSFET N-CH 1200V 29A T-MAXSupplier Device Package: T-MAX™ [B2] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V |
auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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APT28M120B2 | Hersteller : Microchip / Microsemi |
MOSFET FG, MOSFET, 1200V, TO-247 T-MAX |
auf Bestellung 122 Stücke: Lieferzeit 10-14 Tag (e) |