APT28M120B2 Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 37.7 EUR |
| 10+ | 37.18 EUR |
| 25+ | 36.51 EUR |
| 50+ | 35.56 EUR |
| 100+ | 33.65 EUR |
| 500+ | 32.84 EUR |
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Technische Details APT28M120B2 Microchip Technology
Description: MOSFET N-CH 1200V 29A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V, Power Dissipation (Max): 1135W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V.
Weitere Produktangebote APT28M120B2 nach Preis ab 46.35 EUR bis 46.35 EUR
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APT28M120B2 | Microchip Technology |
 Description: MOSFET N-CH 1200V 29A T-MAXPackaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V Power Dissipation (Max): 1135W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V |
auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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APT28M120B2 | Microchip / Microsemi |
MOSFET FG, MOSFET, 1200V, TO-247 T-MAX |
auf Bestellung 122 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| APT28M120B2 |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 29A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Description: MOSFET N-CH 1200V 29A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 46.35 EUR |
| APT28M120B2 |
|
Hersteller: Microchip / Microsemi
MOSFET FG, MOSFET, 1200V, TO-247 T-MAX
MOSFET FG, MOSFET, 1200V, TO-247 T-MAX
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)