APT28M120B2 Microchip Technology
auf Bestellung 753 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 36.12 EUR |
| 100+ | 31.19 EUR |
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Technische Details APT28M120B2 Microchip Technology
Description: MOSFET N-CH 1200V 29A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V, Power Dissipation (Max): 1135W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V.
Weitere Produktangebote APT28M120B2 nach Preis ab 38.95 EUR bis 38.95 EUR
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APT28M120B2 | Hersteller : Microchip Technology |
 Description: MOSFET N-CH 1200V 29A T-MAXPackaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V Power Dissipation (Max): 1135W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V |
auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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APT28M120B2 | Hersteller : Microchip / Microsemi |
MOSFET FG, MOSFET, 1200V, TO-247 T-MAX |
auf Bestellung 122 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT28M120B2 | Hersteller : MICROCHIP TECHNOLOGY |
APT28M120B2 THT N channel transistors |
Produkt ist nicht verfügbar |
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APT28M120B2 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 1.2KV 29A 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |