APT29F100L Microsemi

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264, Mounting: THT, Case: TO264, On-state resistance: 440mΩ, Pulsed drain current: 120A, Power dissipation: 1.04kW, Gate charge: 260nC, Polarisation: unipolar, Technology: POWER MOS 8®, Drain current: 19A, Kind of channel: enhanced, Drain-source voltage: 1kV, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, Anzahl je Verpackung: 1 Stücke.