APT2X60D120J Microchip Technology
Hersteller: Microchip Technology
Description: DIODE MODULE GP 1200V 53A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 53A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Technische Details APT2X60D120J Microchip Technology
Description: DIODE MODULE GP 1200V 53A ISOTOP, Current - Reverse Leakage @ Vr: 250 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Supplier Device Package: ISOTOP®, Current - Average Rectified (Io) (per Diode): 53A, Diode Configuration: 2 Independent, Technology: Standard, Reverse Recovery Time (trr): 400 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
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APT2X60D120J | Microsemi |
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Hersteller: Microsemi
Discrete Semiconductor Modules Fast Recovery Epitaxial Diode - D
Discrete Semiconductor Modules Fast Recovery Epitaxial Diode - D
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)