APT30F50S Microchip Technology
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.51 EUR |
| 100+ | 9.06 EUR |
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Technische Details APT30F50S Microchip Technology
Description: MOSFET N-CH 500V 30A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V, Power Dissipation (Max): 415W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V.
Weitere Produktangebote APT30F50S
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT30F50S | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 500V 30A 3-Pin(2+Tab) D3PAK Tube |
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| APT30F50S | Hersteller : MICROCHIP TECHNOLOGY |
APT30F50S SMD N channel transistors |
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APT30F50S | Hersteller : Microchip Technology |
Description: MOSFET N-CH 500V 30A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V Power Dissipation (Max): 415W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V |
Produkt ist nicht verfügbar |