APT30GP60BDQ1G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 49A; 463W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Collector current: 49A
Power dissipation: 463W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 165ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 15.94 EUR |
| 6+ | 12.13 EUR |
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Technische Details APT30GP60BDQ1G MICROCHIP (MICROSEMI)
Description: IGBT PT 600V 100A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 13ns/55ns, Switching Energy: 260µJ (on), 250µJ (off), Test Condition: 400V, 30A, 5Ohm, 15V, Gate Charge: 90 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 463 W.
Weitere Produktangebote APT30GP60BDQ1G nach Preis ab 12.13 EUR bis 21.16 EUR
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APT30GP60BDQ1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 49A; 463W; TO247-3 Type of transistor: IGBT Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Collector current: 49A Power dissipation: 463W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 90nC Kind of package: tube Turn-on time: 31ns Turn-off time: 165ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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APT30GP60BDQ1G | Hersteller : Microchip Technology |
Description: IGBT PT 600V 100A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 13ns/55ns Switching Energy: 260µJ (on), 250µJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 463 W |
auf Bestellung 130 Stücke: Lieferzeit 21-28 Tag (e) |
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| APT30GP60BDQ1G | Hersteller : Microchip Technology |
IGBT Transistors IGBT PT MOS 7 Combi 600 V 30 A TO-247 |
auf Bestellung 180 Stücke: Lieferzeit 14-28 Tag (e) |
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APT30GP60BDQ1G | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 600V 100A 463000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT30GP60BDQ1G | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 600V 100A 463W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT30GP60BDQ1G | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 600V 100A 463W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| APT30GP60BDQ1G | Hersteller : MICROSEMI |
TO247/INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI APT30GP60 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |