APT30GS60BRDQ2G Microchip / Microsemi
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Technische Details APT30GS60BRDQ2G Microchip / Microsemi
Description: IGBT 600V 54A 250W SOT227, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A, Supplier Device Package: TO-247 [B], IGBT Type: NPT, Td (on/off) @ 25°C: 16ns/360ns, Switching Energy: 570µJ (off), Test Condition: 400V, 30A, 9.1Ohm, 15V, Gate Charge: 145 nC, Current - Collector (Ic) (Max): 54 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 113 A, Power - Max: 250 W.
Weitere Produktangebote APT30GS60BRDQ2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT30GS60BRDQ2G | Hersteller : Microchip Technology |
 Trans IGBT Chip N-CH 600V 54A 250W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT30GS60BRDQ2G | Hersteller : Microchip Technology |
Description: IGBT 600V 54A 250W SOT227 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 16ns/360ns Switching Energy: 570µJ (off) Test Condition: 400V, 30A, 9.1Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 113 A Power - Max: 250 W |
Produkt ist nicht verfügbar |