APT30GS60BRDQ2G Microchip / Microsemi

Description: IGBT 600V 54A 250W SOT227, Power - Max: 250 W, Current - Collector Pulsed (Icm): 113 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 54 A, Gate Charge: 145 nC, Test Condition: 400V, 30A, 9.1Ohm, 15V, Switching Energy: 570µJ (off), Td (on/off) @ 25°C: 16ns/360ns, IGBT Type: NPT, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Supplier Device Package: TO-247 [B], Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A, Reverse Recovery Time (trr): 25 ns.