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APT30GT60BRG

APT30GT60BRG Microchip Technology

High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip Technology
IGBT Transistors FG, IGBT, 600V, 30A, TO-247, RoHS
auf Bestellung 225 Stücke:
Lieferzeit 214-218 Tag (e)
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1+13.24 EUR
10+11.92 EUR
25+11.07 EUR
100+9.79 EUR
250+8.94 EUR
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Technische Details APT30GT60BRG Microchip Technology

Description: IGBT NPT 600V 64A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A, Supplier Device Package: TO-247 [B], IGBT Type: NPT, Td (on/off) @ 25°C: 12ns/225ns, Switching Energy: 525µJ (on), 600µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 145 nC, Current - Collector (Ic) (Max): 64 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 110 A, Power - Max: 250 W.

Weitere Produktangebote APT30GT60BRG

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APT30GT60BRG APT30GT60BRG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 600V 64A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 525µJ (on), 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
APT30GT60BRG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT30GT60BRG
Hersteller: Microchip Technology
Description: IGBT NPT 600V 64A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 525µJ (on), 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH