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APT30GT60KRG

APT30GT60KRG Microsemi Corporation

APT30GT60KR%28G%29.pdf
Hersteller: Microsemi Corporation
Description: IGBT 600V 64A 250W TO220
Td (on/off) @ 25°C: 12ns/225ns
IGBT Type: NPT
Supplier Device Package: TO-220 [K]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 250 W
Current - Collector Pulsed (Icm): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 64 A
Gate Charge: 145 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 525µJ (on), 600µJ (off)
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Technische Details APT30GT60KRG Microsemi Corporation

Description: IGBT 600V 64A 250W TO220, Td (on/off) @ 25°C: 12ns/225ns, IGBT Type: NPT, Supplier Device Package: TO-220 [K], Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Power - Max: 250 W, Current - Collector Pulsed (Icm): 110 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 64 A, Gate Charge: 145 nC, Test Condition: 400V, 30A, 10Ohm, 15V, Switching Energy: 525µJ (on), 600µJ (off).