APT30SCD65B Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.7 EUR |
| 10+ | 21.55 EUR |
| 25+ | 19.92 EUR |
| 50+ | 18.85 EUR |
| 100+ | 18.18 EUR |
| 250+ | 16.59 EUR |
| 500+ | 15.54 EUR |
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Technische Details APT30SCD65B Microchip Technology
Description: DIODE SIL CARBIDE 650V 46A TO247, Packaging: Bulk, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 945pF @ 1V, 1MHz, Current - Average Rectified (Io): 46A, Supplier Device Package: TO-247, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A, Current - Reverse Leakage @ Vr: 600 µA @ 650 V.
Weitere Produktangebote APT30SCD65B
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| APT30SCD65B | Microsemi Corporation |
Description: DIODE SIL CARBIDE 650V 46A TO247 Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 945pF @ 1V, 1MHz Current - Average Rectified (Io): 46A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 600 µA @ 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT30SCD65B |
Hersteller: Microsemi Corporation
Description: DIODE SIL CARBIDE 650V 46A TO247
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 945pF @ 1V, 1MHz
Current - Average Rectified (Io): 46A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 600 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 46A TO247
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 945pF @ 1V, 1MHz
Current - Average Rectified (Io): 46A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 600 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH