APT30SCD65B Microsemi
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details APT30SCD65B Microsemi
Description: DIODE SIL CARBIDE 650V 46A TO247, Packaging: Bulk, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 945pF @ 1V, 1MHz, Current - Average Rectified (Io): 46A, Supplier Device Package: TO-247, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A, Current - Reverse Leakage @ Vr: 600 µA @ 650 V.
Weitere Produktangebote APT30SCD65B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| APT30SCD65B | Hersteller : Microsemi |
auf Bestellung 195 Stücke: Lieferzeit 21-28 Tag (e) |
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APT30SCD65B | Hersteller : Microchip Technology |
 Rectifier Diode Schottky 650V 46A 2-Pin(2+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| APT30SCD65B | Hersteller : Microsemi Corporation |
Description: DIODE SIL CARBIDE 650V 46A TO247 Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 945pF @ 1V, 1MHz Current - Average Rectified (Io): 46A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 600 µA @ 650 V |
Produkt ist nicht verfügbar |