Technische Details APT32F120J Microsemi
Description: MOSFET N-CH 1200V 33A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 25A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: ISOTOP®, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18200 pF @ 25 V.
Weitere Produktangebote APT32F120J
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT32F120J | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 1.2KV 33A 4-Pin SOT-227 Tube |
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| APT32F120J | Hersteller : MICROCHIP TECHNOLOGY |
APT32F120J Transistor modules MOSFET |
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APT32F120J | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1200V 33A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 25A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18200 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT32F120J | Hersteller : Microchip Technology |
Discrete Semiconductor Modules FG, FREDFET, 1200V, SOT-227 |
Produkt ist nicht verfügbar |