Technische Details APT33N90JCU2 Microsemi
Description: MOSFET N-CH 900V 33A SOT227, Packaging: Tray, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3mA, Supplier Device Package: SOT-227, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V.
Weitere Produktangebote APT33N90JCU2
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APT33N90JCU2 | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 900V 33A 4-Pin SOT-227 Tube |
Produkt ist nicht verfügbar |
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APT33N90JCU2 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 900V 33A SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: SOT-227 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
Produkt ist nicht verfügbar |