Technische Details APT34M120J Microsemi
Description: MOSFET N-CH 1200V 35A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 25A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18200 pF @ 25 V.
Weitere Produktangebote APT34M120J
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT34M120J | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 1.2KV 35A 4-Pin SOT-227 Tube |
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| APT34M120J | Hersteller : MICROCHIP TECHNOLOGY |
APT34M120J Transistor modules MOSFET |
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| APT34M120J | Hersteller : MICROSEMI |
ISOTOP/N-Channel MOSFET APT34M120 Anzahl je Verpackung: 1 Stücke |
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APT34M120J | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1200V 35A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 25A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18200 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT34M120J | Hersteller : Microchip Technology |
Discrete Semiconductor Modules FG, MOSFET, 1200V, SOT-227 |
Produkt ist nicht verfügbar |