auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 42.93 EUR |
| 10+ | 42.91 EUR |
| 100+ | 40.5 EUR |
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Technische Details APT35GT120JU2 Microchip Technology
Description: IGBT MOD 1200V 55A 260W SOT227, Packaging: Bulk, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A, NTC Thermistor: No, Supplier Device Package: SOT-227, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 260 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V.
Weitere Produktangebote APT35GT120JU2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APT35GT120JU2 | Hersteller : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Mechanical mounting: screw Electrical mounting: screw Pulsed collector current: 80A Application: motors Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 55A Topology: boost chopper Technology: Field Stop; Trench Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT35GT120JU2 | Hersteller : Microchip Technology |
Trans IGBT Module N-CH 1200V 55A 260000mW |
Produkt ist nicht verfügbar |
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| APT35GT120JU2 | Hersteller : MICROSEMI |
SOT227/POWER MODULE - IGBT APT35 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT35GT120JU2 | Hersteller : Microchip Technology |
Description: IGBT MOD 1200V 55A 260W SOT227 Packaging: Bulk Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 260 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V |
Produkt ist nicht verfügbar |
|
| APT35GT120JU2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Mechanical mounting: screw Electrical mounting: screw Pulsed collector current: 80A Application: motors Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 55A Topology: boost chopper Technology: Field Stop; Trench |
Produkt ist nicht verfügbar |