Technische Details APT37M100B2 Microchip / Microsemi
Description: MOSFET N-CH 1000V 37A T-MAX, Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: T-MAX™ [B2], Vgs(th) (Max) @ Id: 5V @ 2.5mA, Power Dissipation (Max): 1135W (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.
Weitere Produktangebote APT37M100B2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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APT37M100B2 | Microchip Technology |
 Description: MOSFET N-CH 1000V 37A T-MAXInput Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: T-MAX™ [B2] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
APT37M100B2 | Microchip Technology |
MOSFETs MOSFET MOS 8 1000 V 37 A TO-247 MAX |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT37M100B2 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 37A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: MOSFET N-CH 1000V 37A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT37M100B2 |
|
Hersteller: Microchip Technology
MOSFETs MOSFET MOS 8 1000 V 37 A TO-247 MAX
MOSFETs MOSFET MOS 8 1000 V 37 A TO-247 MAX
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH