Technische Details APT39F60J Microsemi
Category: Transistor modules MOSFET, Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W, Technology: POWER MOS 8®, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 26A, Power dissipation: 480W, Case: ISOTOP, Gate-source voltage: ±30V, On-state resistance: 0.11Ω, Kind of package: tube, Kind of channel: enhancement, Semiconductor structure: single transistor, Pulsed drain current: 210A, Type of semiconductor module: MOSFET transistor, Electrical mounting: screw, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT39F60J
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT39F60J | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 600V 42A 4-Pin SOT-227 Tube |
Produkt ist nicht verfügbar |
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| APT39F60J | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 480W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.11Ω Kind of package: tube Kind of channel: enhancement Semiconductor structure: single transistor Pulsed drain current: 210A Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT39F60J | Hersteller : Microsemi Power Products Group |
Description: MOSFET N-CH 600V 42A SOT-227 |
Produkt ist nicht verfügbar |
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| APT39F60J | Hersteller : Microchip Technology |
MOSFET Modules FREDFET MOS8 600 V 39 A SOT-227 |
Produkt ist nicht verfügbar |
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| APT39F60J | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 480W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.11Ω Kind of package: tube Kind of channel: enhancement Semiconductor structure: single transistor Pulsed drain current: 210A Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |