Technische Details APT39F60J Microsemi
Category: Transistor modules MOSFET, Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W, Polarisation: unipolar, Power dissipation: 480W, Case: ISOTOP, Kind of package: tube, Drain current: 26A, On-state resistance: 0.11Ω, Electrical mounting: screw, Mechanical mounting: screw, Technology: POWER MOS 8®, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 210A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 600V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT39F60J
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT39F60J | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 600V 42A 4-Pin SOT-227 Tube |
Produkt ist nicht verfügbar |
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| APT39F60J | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W Polarisation: unipolar Power dissipation: 480W Case: ISOTOP Kind of package: tube Drain current: 26A On-state resistance: 0.11Ω Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 8® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 210A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT39F60J | Hersteller : Microsemi Power Products Group |
Description: MOSFET N-CH 600V 42A SOT-227 |
Produkt ist nicht verfügbar |
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| APT39F60J | Hersteller : Microchip Technology |
MOSFET Modules FREDFET MOS8 600 V 39 A SOT-227 |
Produkt ist nicht verfügbar |
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| APT39F60J | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W Polarisation: unipolar Power dissipation: 480W Case: ISOTOP Kind of package: tube Drain current: 26A On-state resistance: 0.11Ω Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 8® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 210A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 600V |
Produkt ist nicht verfügbar |