APT40GP60J MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B; tube
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Kind of package: tube
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®; PT
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Electrical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details APT40GP60J MICROCHIP TECHNOLOGY
Description: IGBT 600V 86A 284W SOT227, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 86 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 284 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 4.61 nF @ 25 V.
Weitere Produktangebote APT40GP60J
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APT40GP60J | Hersteller : Microchip Technology |
Description: IGBT 600V 86A 284W SOT227 Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 86 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 284 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.61 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APT40GP60J | Hersteller : Microchip Technology |
IGBT Modules IGBT PT MOS 7 Single 600 V 40 A SOT-227 |
Produkt ist nicht verfügbar |
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| APT40GP60J | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B; tube Collector current: 40A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 160A Kind of package: tube Mechanical mounting: screw Type of module: IGBT Technology: POWER MOS 7®; PT Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Electrical mounting: screw |
Produkt ist nicht verfügbar |