Technische Details APT40GP90JDQ2 MICROSEMI
Description: IGBT MODULE 900V 64A 284W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 64 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Power - Max: 284 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.
Weitere Produktangebote APT40GP90JDQ2
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APT40GP90JDQ2 | Hersteller : Microchip Technology |
 Description: IGBT MODULE 900V 64A 284W ISOTOPPackaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 900 V Power - Max: 284 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
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| APT40GP90JDQ2 | Hersteller : Microchip / Microsemi |
IGBT Modules FG, IGBT-COMBI, 900V, SOT-227 |
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APT40GP90JDQ2 | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 27A; SOT227B; 284W Technology: POWER MOS 7® Type of semiconductor module: IGBT Case: SOT227B Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Kind of package: tube Gate-emitter voltage: ±30V Collector current: 27A Pulsed collector current: 160A Power dissipation: 284W Max. off-state voltage: 900V |
Produkt ist nicht verfügbar |