APT41F100J Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 1000V 42A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 33A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V
auf Bestellung 115 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 162.06 EUR |
| 100+ | 131.57 EUR |
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Technische Details APT41F100J Microchip Technology
Description: MOSFET N-CH 1000V 42A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 33A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: ISOTOP®, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V.
Weitere Produktangebote APT41F100J nach Preis ab 140.97 EUR bis 163.23 EUR
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APT41F100J | Hersteller : Microchip Technology |
Discrete Semiconductor Modules FG, FREDFET, 1000V, SOT-227 |
auf Bestellung 10 Stücke: Lieferzeit 14-28 Tag (e) |
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APT41F100J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 42A; ISOTOP; screw; Idm: 260A; 960W Semiconductor structure: single transistor Case: ISOTOP Power dissipation: 960W Technology: POWER MOS 8® Electrical mounting: screw Pulsed drain current: 260A Polarisation: unipolar Drain current: 42A Kind of channel: enhanced Drain-source voltage: 1kV Mechanical mounting: screw Gate-source voltage: ±30V Type of module: MOSFET transistor On-state resistance: 0.2Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT41F100J | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 1KV 42A 4-Pin SOT-227 Tube |
Produkt ist nicht verfügbar |
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| APT41F100J | Hersteller : MICROSEMI |
ISOTOP/N-Channel FREDFET APT41F100 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT41F100J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 42A; ISOTOP; screw; Idm: 260A; 960W Semiconductor structure: single transistor Case: ISOTOP Power dissipation: 960W Technology: POWER MOS 8® Electrical mounting: screw Pulsed drain current: 260A Polarisation: unipolar Drain current: 42A Kind of channel: enhanced Drain-source voltage: 1kV Mechanical mounting: screw Gate-source voltage: ±30V Type of module: MOSFET transistor On-state resistance: 0.2Ω |
Produkt ist nicht verfügbar |