Weitere Produktangebote APT44F80L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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APT44F80L | MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 173A; 1135W; TO264 Mounting: THT Pulsed drain current: 173A Power dissipation: 1135W Gate charge: 305nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 29A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO264 On-state resistance: 0.21Ω |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| APT44F80L |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 173A; 1135W; TO264
Mounting: THT
Pulsed drain current: 173A
Power dissipation: 1135W
Gate charge: 305nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO264
On-state resistance: 0.21Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 173A; 1135W; TO264
Mounting: THT
Pulsed drain current: 173A
Power dissipation: 1135W
Gate charge: 305nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO264
On-state resistance: 0.21Ω
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)