APT44F80L MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 173A; 1135W; TO264
Mounting: THT
Case: TO264
Drain-source voltage: 800V
Drain current: 29A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET
Power dissipation: 1135W
Polarisation: unipolar
Kind of package: tube
Gate charge: 305nC
Technology: POWER MOS 8®
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 173A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
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Technische Details APT44F80L MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 800V 47A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 24A, 10V, Power Dissipation (Max): 1135W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-264, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9330 pF @ 25 V.
Weitere Produktangebote APT44F80L nach Preis ab 71.5 EUR bis 71.5 EUR
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APT44F80L | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 173A; 1135W; TO264 Mounting: THT Case: TO264 Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.21Ω Type of transistor: N-MOSFET Power dissipation: 1135W Polarisation: unipolar Kind of package: tube Gate charge: 305nC Technology: POWER MOS 8® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 173A |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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APT44F80L Produktcode: 204411
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Description: MOSFET N-CH 800V 47A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 24A, 10V Power Dissipation (Max): 1135W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9330 pF @ 25 V |
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